marking cod e: silicon epitaxial planar switching diode features ? sod-123 package ? fast swit ching absolute maxim um ratings (t a = 25 o c) parameter symbol value unit peak reverse voltage v rm 100 v reverse voltage v r 75 v average rectified forward current i f(av) 150 ma non-repetitive peak forward surge current at t = 1 s i fsm 2 a power dissipation p tot 400 mw thermal resistance from junction to ambient air r ja 312 o c/w junction temperature t j 150 o c storage temperature range t stg - 65 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit reverse breakdown voltage at i r = 1 a v (br)r 75 - v forward voltage at i f = 1 ma at i f = 10 ma at i f = 50 ma at i f = 150 ma v f - - - - 0.715 0.855 1 1.25 v peak reverse current at v r = 75 v at v r = 20 v at v r = 75 v, t j = 150 o c at v r = 25 v, t j = 150 o c i r - - - - 1 25 50 30 a na a a total capacitance at v r = 0 v, f = 1 mhz c t - 2 pf rev erse recov ery time at i rr = 0.1 x i r , i f = i r = 10 ma, r l = 100 ? t rr - 4 ns anode 2 top vi e w simplified outline sod-123 and symbol 1 2 pi nning 1 pin cathode description * * BAV16W z ibo seno electronic engineering co., ltd. 1 of 3 BAV16W www.senocn.com a l l d a t a s h e e t
~ ~ ~ 2 n f 5 k rectifica t ion efficiency measurement circuit 6 0 v r f = 2 v v o for w ard characteristics tj=100 c i f ( m a ) 10 10 -1 10 0 -2 1 v f (v ) 1 tj =25 c 10 2 10 3 2 i r ( n a ) am i ssible power dissipation vs. ambient temperature tamb ( c ) p t o t ( m w ) 400 0 200 600 1000 800 100 200 l eakage cu rrent vs. junction temperature v r =20v 5 2 1 0 2 5 10 t j ( c ) 100 10 3 2 5 2 10 5 2 10 4 200 reverse capac it ance vs. reverse voltage 0.9 c t o t ( v r ) c t o t ( 0 v ) 0.7 0 2 0. 8 1. 0 1.1 6 v r (v) 48 10 tj =25 c f=1mhz amis si bl e repetitive peak forward current vs. pulse duration 0.1 2 10 -5 10 55 2 -4 -3 10 2 -2 10 5 t p (s) 10 1 3 2 5 4 i f r m ( a ) 4 5 2 3 100 3 2 5 4 0.5 0.2 0.1 v= 0 10 10 5 2 -1 22 5 1 5 silicon epitaxial planar switching diode BAV16W z ibo seno electronic engineering co., ltd. 2 of 3 BAV16W www.senocn.com a l l d a t a s h e e t
package outline plastic surface mounted package; 2 leads sod-123 e mm un i t a b c de hv all ro un d d b c a a h h e p p e 1.15 1. 05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 o 5 silicon epitaxial planar switching diode BAV16W z ibo seno electronic engineering co., ltd. 3 of 3 BAV16W www.senocn.com a l l d a t a s h e e t
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